TRS8A65F,S1Q parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TRS8A65F,S1Q

Description:

PB-F DIODE TO-220-2L V=650 IF=8A

Stock:

8781

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.72

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Offer

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Parameters

Capacitance at different Vr and F

28pF @ 650V,1MHz

Current - reverse leakage at different Vr

40 µA @ 650 V

Current average rectification (Io)

8A(DC)

Diode type

SiC Schottky

Reverse recovery time (trr)

0 ns

Speed

No recovery time > 500mA(Io)

Supplier device packaging

TO-220F-2L

Voltage DC reverse (Vr) (maximum)

650 V

Voltage at different If - forward (Vf)

1.6 V @ 8 A

packing

pipe

series

working temperature

Encapsulation/Housing

TO-220-2 Whole package

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

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TRS8A65F,S1Q（Diode rectifier）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8781,Price reference "real-time change" China/Hongkong。 TRS8A65F,S1Q package/specs, Download TRS8A65F,S1Q、Datasheet。